InGaAs and other compound epitaxial wafers

High performance and high-quality compound semiconductor materials based on gallium arsenide (GaAs), indium phosphide (InP), and indium antimonide (GaSb) substrates can cover near-infrared to long wavelength infrared spectra, becoming a "golden band" solution in the field of optoelectronics. In the future, with breakthroughs in superlattice band engineering and heterogeneous integration technology, its applications will extend to cutting-edge fields such as quantum sensing and neural morphology computing.

Applications

Applied to photodetectors, avalanche diodes, heterojunction bipolar transistors, quantum cascade lasers, high electron mobility transistors, etc.

Features

InGaAs (Indium Gallium Arsenide) is a III-V compound semiconductor material with many superior properties, making it widely used in the fields of optoelectronics and semiconductors. Here are some of the main advantages of InGaAs materials:

Wide bandgap adjustment range: InGaAs can achieve wide bandgap adjustment by adjusting the composition of Indium and Gallium. This enables InGaAs to cover the infrared spectral range, including near-infrared and shortwave infrared, which is crucial for many optoelectronic devices and communication applications.

High electron mobility: InGaAs has a high electron mobility, making it an ideal choice for high-speed electronic devices. This is crucial for high-frequency, high-speed applications such as high-speed field-effect transistors (FETs) and high-frequency photodetectors.

Sensitivity of photodetectors: InGaAs has high photoelectric detection sensitivity in the near-infrared and shortwave infrared ranges. This makes InGaAs photodetectors widely used in fields such as night vision, communication, and medical imaging.

High saturation drift velocity: Due to its high electron mobility, InGaAs exhibits high saturation drift velocity under high electric fields. This is very advantageous for high-frequency applications and high-speed electronic devices.

Low noise performance: InGaAs photodetectors typically exhibit low noise levels, which is crucial for applications that require high detector sensitivity and accuracy, such as optical communications and scientific instruments.

InGaAs PIN 光电探测器外延材料

产品规格	尺寸	2"、3"、4"
	外延化合物	InP、InAlAs、InGaAs
	掺杂	S i ( N 型 ) B e ( P 型 )
	波段	常规波长0.9～1.7		延伸波长1.0~2.5
产品结构	平面型	材料	掺杂浓度(/cm³)		厚度 ( n m )
		InP	Substrate
		InP Buffer	1-5×10¹8		200-1000
		n+-In,Al1As Buffer	1-5×10¹		1000-2000
		i-InGaAs Absorber	uid		1500-3000
		n-In,Al₁As Cap	1-5×10¹6		500-1000
	台面型	InP	Substrate
		InP Buffer	1-5×10¹8		200-1000
		n+-In Al₁As Buffer	1-5×10¹8		1000-2000
		i-InGaAs Absorber	uid		1500-3000
		p-In,Al₁₋As Cap	1-5×10¹		500-1000

InP基雪崩二极管 (APD) 外延材料

产品规格	尺寸	2"、3"、4"
	外延化合物	InP、InGaAs、InGaAsP、InAlAs
	掺杂	S i ( N 型 )
产品结构1	材料	掺杂浓度(/cm³)	厚度(nm)
	InP	N-substrate
	InP Buffer	1-5×10¹8	200-1000
	InGaAs Absorber	uid	1500-3000
	InGaAsP	uid	10-500
	InP	1-5×10¹7	200-1000
	InP	uid	2500-4000
产品结构2	材料	掺杂浓度(/cm³)	厚度(nm)
	InP	N-substrate
	InP Buffer	1-5×1018	200-1000
	InAlAs	1-5×10¹8	200-1000
	InGaAs Absorber	uid	1500-3000
	InA1As	uid	10-500
	InAlAs	1-5×10¹7	200-1000
	InP	uid	500-4000

异质结双极晶体管 (HBT) 外延材料

产品规格	尺寸	2"、3"、4"、6"
	外延化合物	GaAs、AlGaAs、InGaAs、InP
	掺杂	S i ( N 型 ) B e ( P 型 )
产品结构1	材料	掺杂浓度(/cm³)	厚度(nm)
	InP	N-substrate
	n+InGaAs	1-5×10¹8	200-1000
	p+InGaAs	10¹⁸-10¹⁹	50-150
	N InP	1-5×10¹7	100-1000
	n+InGaAs	1-5×10¹⁹	10-100
产品结构2	材料	掺杂浓度 ( / c m ³ )	厚度(nm)
	GaAs	N-substrate
	n+GaAs	1-5×10¹8	200-1000
	p+GaAs	10¹⁸-10¹⁹	50-150
	N AlGaAs	1-5×10¹7	100-1000
	n+GaAs	1-5×10¹⁹	10-100

量子级联激光器 (QCL) 外延材料

产品规格	尺寸	2"、3"、4"、6"
	外延化合物	GaAs、AlGaAs、InP、InGaAs、InAlAs
	掺杂	S i ( N 型 )
产品结构 1	材料	掺杂浓度(/cm³)	厚度 ( n m )
	GaAs	Substrate
	GaAs	1-8×10¹8	200-1000
	AlGaAs	uid	5-50
	数字递变层	uid	100-1000
	有源区(×100 - ×200)	uid	2000-8000
	数字递变层	uid	100-1000
	AlGaAs	uid	5-50
	GaAs	1-8×10¹8	50-150
产品结构 2	材料	掺杂浓度(/cm³)	厚度 ( n m )
	InP	Substrate
	InP	1-5×10¹7	200-1000
	InGaAs	uid	5-50
	数字递变层	1-5×10¹7	20-100
	有源区(×20-×50)	uid	500-2000
	数字递变层	1-5×10¹7	20-100
	InP	0.1-8×10¹8	500-2000
	InGaAs	1-2×10¹9	10-100

GaAs 基赝配高电子迁移率晶体管 (pHEMT) 外延材料

产品规格	尺寸	2"、3"、4"、6"
	外延化合物	GaAs、AlGaAs、InGaAs
	掺杂	S i ( N 型 )
产品结构	材料	掺杂浓度(/cm³)	厚度(nm)
	GaAs	Substrate
	GaAs Buffer	uid	50~1000
	i-InGaAs	uid	10-50
	i-AlGaAs	uid	1-50
	δ-Si	4-5×10¹²cm-²
	i-AlGaAs	uid	1-50
	n-GaAs	1-8×10¹8cm³	10-200

InAs/GaSb 探测器外延材料

产品规格	尺寸	2"、3"
	外延化合物	InAs、GaSb
	掺杂	Si(N型)、Be(P型)、Te(N型)
产品结构1	材料	掺杂浓度(/cm³)	厚度(nm)
	GaSb	Substrate
	p-GaSb buffer	1-5×1018	200-1000
	p-InAs/GaSb	1-5×10¹8	200-800
	i-InAs/GaSb Absorber	uid	1500-4000
	n-InAs/GaSb	1-5×10¹8	200-800
	n-InAs	1-5×1018	10-100
产品结构2	材料	掺杂浓度(/cm³)	厚度(nm)
	GaSb	Substrate
	p-GaSb buffer	1-5×10¹8	200-1000
	p-InAs/GaSb MW	1-5×10¹8	200-800
	i-InAs/GaSb MW Absorber	uid	1500-4000
	n-GaSb	1-5×1018	200-800
	i-InAs/GaSb LW Absorber	uid	1500-4000
	p-InAs/GaSb LW	1-5×1018	200-800
	p-GaSb	1-5×10¹8	500-1000

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InGaAs and other compound epitaxial wafers

Applications

Features

Properties