Indium Arsenide (InAs) epitaxial wafer

InAs/GaAs epitaxial wafer refers to a heterostructure material system in which indium arsenide (InAs) quantum dots, quantum wells, or thin films are grown on a gallium arsenide (GaAs) single crystal substrate using molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) techniques.

This type of structure typically has strain control and bandgap engineering properties, and is widely used in infrared detectors, high-speed electronic devices, and optical communication fields.

Performance Characteristics

Properties	Feature Description
Bandgap structure	InAs has a narrow bandgap (~0.36 eV), while GaAs has a wider bandgap (~1.42 eV), forming a band step heterojunction
High electron mobility	Electron mobility up to 30000 cm ²/V · s, suitable for high-speed devices
Strain control structure	There is lattice mismatch (about 7%) in the growth of InAs on GaAs, which can form self-assembled quantum dots (QDs)
Adjustable emission wavelength	By adjusting the thickness, strain, and spacing layer of InAs, the emission wavelength can be controlled to 1.0-1.6 μ m (communication band)
Good thermal stability	GaAs substrate provides good thermal stability and is suitable for constructing multi-layer structural devices

Typical applications

Mid infrared photodetectors (MIR photodetectors)

InAs/GaAs quantum well infrared detector (QWIP)

Used for gas detection, night vision imaging, aerospace detection, etc

Optical communication laser

InAs/GaAs self-assembled quantum dot laser (QD Laser)

The working wavelength covers 1.3-1.55 μ m and is a key component of fiber optic communication

High speed electronic devices

Used for high-speed field-effect transistors (FETs) such as HEMTs (high electron mobility transistors) and THz detectors

Single photon source, quantum computing

InAs/GaAs quantum dot structure is an important platform for realizing quantum dot single photon emitters

Applications

This type of structure typically has strain control and bandgap engineering properties, and is widely used in infrared detectors, high-speed electronic devices, and optical communication fields.

Features

Heterogeneous integration has strong compatibility: it can be combined with various III-V materials such as GaAs, InP, AlGaAs to form composite structures
Significant quantum size effect: suitable for quantum dot devices and precision laser applications
High efficiency and low threshold laser emission: InAs QD lasers have higher energy efficiency than traditional InGaAs QW devices
Compatible with mature MOCVD/MBE processes: stable process, high repeatability, and capable of large-scale epitaxial preparation

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Indium Arsenide (InAs) epitaxial wafer

Applications

Features

Properties