
- Home
-
Products
-
- Semiconductor crystal
-
Single crystal substrate
-
Multifunctional single crystal substrate
- Barium titanate (BaTiO3)
- Strontium titanate (SrTiO3)
- Iron doped strontium titanate (Fe:SrTiO3)
- Neodymium doped strontium titanate (Nd:SrTiO3)
- Aluminium oxide (Al2O3)
- Potassium tantalum oxide (KTaO3)
- Lead magnesium niobate–lead titanate (PMN-PT)
- Magnesium oxide (MgO)
- Magnesium aluminate spinel (MgAl2O4)
- Lithium aluminate (LiAlO2)
- Lanthanu m aluminate (LaAlO3)
- Lanthanu m strontium aluminate (LaSrAlO4)
- (La,Sr)(Al,Ta)O3
- Neodymium gallate (NdGaO3)
- Terbium gallium garnet (TGG)
- Gadolinium gallium garnet (GGG)
- Sodium chloride (NaCl)
- Potassium bromide (KBr)
- Potassium chloride (KCl)
-
Multifunctional single crystal substrate
-
Functional crystal
- Optical window
- Scintillation crystal
-
Laser crystal
- Rare earth doped lithium yttrium fluoride (RE:LiYF4)
- Rare earth doped lithium lutetium fluoride (RE:LiLuF4)
- Ytterbium doped yttrium aluminium garnet (Yb:YAG)
- Neodymium doped yttrium aluminium garnet (Nd:YAG)
- Erbium doped yttrium aluminium garnet (Er:YAG)
- Holmium doped yttrium aluminium garnet (Ho:YAG)
- Nd,Yb,Er,Tm,Ho,Cr,Lu Infrared laser crystal
- N* crystal
- Metal single crystal
- Material testing analysis
- Material processing
- Scientific research equipment
-
-
Epitaxial Wafer/Films
-
Inorganic epitaxial wafer/film
- Gallium Oxide epitaxial wafer (Ga2O3)
- ε - Gallium Oxide (Ga2O3)
- Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)
- Lithium niobate thin film epitaxial wafer
- Lithium tantalate thin film epitaxial wafer
- InGaAs epitaxial wafer
- Gallium Nitride(GaN) epitaxial wafer
- Epitaxial silicon wafer
- Yttrium Iron Garnet(YIG) epitaxial wafers
- Fullerenes&Fullerols
-
Inorganic epitaxial wafer/film
- Functional Glass
- Fine Ceramics
-
2-D material
- 2-D crystal
-
Layered transition metal compound
- Iron chloride (FeCl2)
- Niobium sulfide (NbS3)
- Gallium telluride iodide (GaTeI)
- Indium selenide (InSe)
- Copper indium phosphide sulfide (CuInP2S6)
- Tungsten sulfide selenide (WSSe)
- Iron germanium telluride (Fe3GeTe2)
- Nickel iodide (NiI2)
- Iron phosphorus sulfide (FePS3)
- Manganese phosphorus selenide (MnPSe3)
- Manganese phosphorus sulfide (MnPS3)
- Interface thermal conductive materials
-
Epitaxial Wafer/Films
-
-
High-purity element
- Non-metallic
-
Metal
- Scandium (Sc)
- Titanium (Ti)
- Indium (In)
- Gallium (Ga)
- Bismuth (Bi)
- Tin (Sn)
- Zinc (Zn)
- Cadmium (Cd)
- Antimony (Sb)
- Copper (Cu)
- Nickel (Ni)
- Molybdenum (Mo)
- Aluminium (Al)
- Rhenium (Re)
- Hafnium (Hf)
- Vanadium (V)
- Chromium (Cr)
- Iron (Fe)
- Cobalt (Co)
- Zirconium (Zr)
- Niobium (Nb)
- Tungsten (W)
- Germanium (Ge)
- Iron(Fe)
-
Compound raw materials
-
Oxide
- Tungsten Trioxide (WO3)
- Hafnium Dioxide (HfO2)
- Ytterbium Oxide (Yb2O3)
- Erbium Oxide (Er2O3)
- Lanthanu m Oxide (La2O3)
- Cerium Dioxide (CeO2)
- Tin Dioxide (SnO2)
- Niobium Oxide (Nb2O3)
- Zirconium Dioxide (ZrO2)
- Zinc Oxide (ZnO)
- Copper Oxide (CuO)
- Magnetite (Fe3O4)
- Titanium Dioxide (TiO2)
- Samarium (III) oxide (Sm2O3)
- Silicon Dioxide (SiO2)
- Aluminum Oxide (Al2O3)
- Gallium Oxide Ga2O3(Powder)
- Sulfide
- Fluoride
- Nitride
- Carbide
-
Halide
- Gallium Chloride (GaCl3)
- Indium Chloride (InCl3)
- Aluminum Chloride (AlCl3)
- Bismuth Chloride (BiCl3)
- Cadmium Chloride (CdCl2)
- Chromium Chloride (CrCl2)
- Chromium Chloride Hydrate (CrCl2(H2O)n)
- Copper Chloride (CuCl)
- Copper Chloride II (CuCl2)
- Cesium Chloride (CsCl)
- Europium Chloride (EuCl3)
- Europium Chloride Hydrate (EuCl3.xH2O)
- Magnesium Chloride (MgCl2)
- Sodium Chloride (NaCl)
- Nickel Chloride (NiCl2)
- Indium Chloride (InCl3)
- Indium Nitrate Hydrate (In(NO3).xH2O)
- Rubidium Chloride (RbCl3)
- Antimony Chloride (SbCl3)
- Samarium Chloride (SmCl3)
- Samarium Chloride Hydrate (SmCl3.xH2O)
- Scandium Chloride (ScCl3)
- Tellurium Chloride (TeCl3)
- Tantalum Chloride (TaCl5)
- Tungsten Chloride (WCl6)
- Aluminum Bromide (AlBr3)
- Barium Bromide (BaBr2)
- Cobalt Bromide (CoBr2)
- Cadmium Bromide (CdBr2)
- Gallium Bromide (GaBr3)
- Gallium Bromide Hydrate (GaBr3.xH2O)
- Nickel Bromide (NiBr2)
- Potassium Bromide (KBr)
- Lead Bromide (PbBr2)
- Zirconium Bromide (ZrBr2)
- Bismuth Bromide (BiBr4)
- Bismuth Iodide (BiI3)
- Calcium Iodide (CaI2)
- Gadolinium Iodide (GdI2)
- Cobalt Iodide (CoI2)
- Cesium Iodide (CsI)
- Europium Iodide (EuI2)
- Lithium Iodide (LiI)
- Lithium Iodide Hydrate (LiI.xH2O)
- Gallium Iodide (GaI3)
- Gadolinium Iodide (GdI3)
- Indium Iodide (InI3)
- Potassium Iodide (KI)
- Lanthanu m Iodide (LaI3)
- Lutetium Iodide (LuI3)
- Magnesium Iodide (MgI2)
- Sodium Iodide (NaI)
-
Oxide
-
High-purity element
-
-
Sputtering Target
-
Metal target material
- Gold (Au(T))
- Silver (Ag(T))
- Platinum (Pt(T))
- Palladium (Pd(T))
- Ruthenium (Ru(T))
- Iridium (Ir(T))
- Aluminium (Al(T))
- Copper (Cu(T))
- Titanium (Ti(T))
- Nickel (Ni(T))
- Chromium (Cr(T))
- Cobalt (Co(T))
- Iron (Fe(T))
- Manganese (Mn(T))
- Zinc (Zn(T))
- Vanadium (V(T))
- Tungsten (W(T))
- Hafnium (Hf(T))
- Niobium (Nb(T))
- Molybdenum (Mo(T))
- Lanthanu m (La (T))
- Cerium (Ce (T))
- Praseodymium (Pr (T))
- Neodymium (Nd (T))
- Samarium (Sm (T))
- Europium (Eu (T))
- Gadolinium (Gd (T))
- Terbium (Tb (T))
- Dysprosium (Dy (T))
- Holmium (Ho (T))
- Erbium (Er (T))
- Thulium (Tm (T))
- Ytterbium (Yb (T))
- Lutetium (Lu (T))
- Alloy target material
- Semiconductor target material
-
Oxide target material
- Aluminum Oxide (Al2O3(T))
- Silicon Dioxide (SiO2(T))
- Titanium Dioxide (TiO2(T))
- Chromium Oxide (Cr2O3(T))
- Nickel Oxide (NiO(T))
- Copper Oxide (CuO(T))
- Zinc Oxide (ZnO(T))
- Zirconium Oxide (ZrO2(T))
- Indium Tin Oxide (ITO(T))
- Indium Zinc Oxide (IZO(T))
- Aluminum Doped Zinc Oxide (AZO(T))
- Cerium Oxide (CeO2(T))
- Tungsten Trioxide (WO3(T))
- Hafnium Oxide (HfO2(T))
- Indium Gallium Zinc Oxide (IGZO(T))
- Nitride target material
- Sulfide target material
-
Antimony tellurium selenium boron target material
- Magnesium Boride (MgB2(T))
- Lanthanu m Hexaboride (LaB6(T))
- Titanium Diboride (TiB2(T))
- Zinc Selenide (ZnSe(T))
- Zinc Antimonide (Zn4Sb3(T))
- Cadmium Selenide (CdSe(T))
- Indium Telluride (In2Te3(T))
- Tin Selenide (SnSe(T))
- Germanium Antimonide (GeSb(T))
- Antimony Selenide (Sb2Se3(T))
- Antimony Telluride (Sb2Te3(T))
- Bismuth Telluride (Bi2Te3(T))
-
Metal target material
-
Sputtering Target
-
- Services
- Media
- Partner
- Contact Us
- About
碳化硅 SiC

碳化硅(SiC)是一种独特的半导体材料,具有一些优异的物理特性,它以其单晶结构,独特的性能优势,广泛的应用以及广阔的发展前景受到广泛的关注。
在结构上,碳化硅单晶主要有多种晶体多形性,包括3C-SiC、4H-SiC、6H-SiC等,这些不同的晶体结构都有各自独特的性能。其中,4H-SiC和6H-SiC以其优秀的电子性能和较高的热导率被广泛应用。
碳化硅的性能优势主要包括宽的禁带宽度、高的电子迁移率、强的热稳定性、良好的化学稳定性和优秀的热导性。其中,宽禁带使得SiC具有高的电子穿透能力,有利于在高温、高压、高频等恶劣环境下运行。高电子迁移率和热导性使得SiC有着很好的开关性能和散热性能。
碳化硅的应用领域非常广泛,包括电力电子、光电子、高温电子、汽车电子等。例如,SiC可以作为功率器件的基础材料,用于电力转换和调控,大大提高了能效。在光电子领域,SiC因其能够承受极端环境的能力而被用于制作太阳能电池。此外,SiC也被广泛应用于电动汽车和混合动力汽车的功率转换系统,带来了显著的能效提升。
碳化硅的发展前景非常广阔。随着技术的不断发展,SiC的生产成本正在逐步降低,使其更广泛地应用于各种领域。而在新能源汽车、风电、太阳能发电等新兴领域,碳化硅的应用也会得到更广泛的开展。同时,随着电力电子设备对效能的更高要求,SiC的优异性能使其在这些领域的应用有着巨大的潜力。总的来说,碳化硅作为一种优秀的半导体材料,将在未来有着更广泛和深入的应用。
二面体科技提供多种规格订制的高质量SiC晶体材料
Applications
• 电力电子设备:由于SiC的高温、高电压特性,它在电力电子设备中被广泛应用,如电力变换器、高频开关电源、充电设备等。
• 汽车电子设备:SiC在电动汽车的功率电子转换器、车载充电器等设备中有广泛的应用,可以提高能效并降低体积。
• 光伏设备:SiC材料在光伏设备中被用作逆变器,可以提高系统的转换效率和稳定性。
• 射频设备:由于SiC的高频特性,它在射频功率放大器和微波设备中有广泛应用。
• LED灯:SiC单晶可作为蓝色LED灯的衬底材料,以提高LED灯的效率和寿命。
• 热电装置:SiC的高热导率和电绝缘性能使得其在热电设备中有很大的应用潜力。
• 耐磨材料:由于SiC的高硬度,它经常被用作耐磨材料,如砂纸、磨具等。
Features
• 高温稳定性:碳化硅具有非常高的熔点(约2730℃),在高温环境下保持稳定性,适合用于高温应用。
• 高硬度:碳化硅是世界上已知硬度仅次于金刚石和立方氮化硼的硬质材料,因此在磨削和切割等工具上有重要应用。
• 耐磨性:除了高硬度,碳化硅也具有良好的耐磨性,使得它在各种需要耐磨的应用中都有广泛用途。
• 出色的热导性:碳化硅的热导率很高,这使得它在需要快速散热的电子设备和其他设备中都有优势。
• 耐化学侵蚀:碳化硅对大多数化学试剂都有较好的抗腐蚀性,使其在各种恶劣环境中仍能保持性能。
• 优良的半导体特性:碳化硅的能隙宽度较大,适合用于高电压和高温环境下的功率电子设备。
• 低热膨胀系数:碳化硅的热膨胀系数相对较低,使得它在温度变化时,尺寸变化不大,有利于保持设备的稳定性。
• 高强度:碳化硅是一种高强度材料,可在各种高压环境中工作,非常适合用于高压设备和组件。
-
生长方法
籽晶升华法 ,PVT(物理气相传输)
晶体结构
六方
晶格常数
a=3.08 Å c=15.08 Å
排列次序
ABCACB
方向
生长轴或 偏<0001>3.5 º
带隙
2.93 eV (间接)
硬度
9.2(mohs)
热传导@300K
5 W/ cm.k
介电常数
e(11)=e(22)=9.66 e(33)=10.33
尺寸
10x3,10x5,10x10,15x15,,20x15,20x20,
dia2”, 15 x 15 mm,10x10mm等
厚度
0.5mm,1.0mm
抛光
单面或双面
晶向
<001>±0.5º
晶面定向精度:
±0.5°
边缘定向精度:
2°(特殊要求可达1°以内)
斜切晶片
可按特定需求,加工边缘取向的晶面按特定角度倾斜(倾斜角1°-45°)的晶片
Ra:
≤5Å(5µm×5µm)
包装
100级洁净袋,1000级超净室