
- Home
-
Products
-
- Semiconductor crystal
-
Single crystal substrate
-
Multifunctional single crystal substrate
- Barium titanate (BaTiO3)
- Strontium titanate (SrTiO3)
- Iron doped strontium titanate (Fe:SrTiO3)
- Neodymium doped strontium titanate (Nd:SrTiO3)
- Aluminium oxide (Al2O3)
- Potassium tantalum oxide (KTaO3)
- Lead magnesium niobate–lead titanate (PMN-PT)
- Magnesium oxide (MgO)
- Magnesium aluminate spinel (MgAl2O4)
- Lithium aluminate (LiAlO2)
- Lanthanu m aluminate (LaAlO3)
- Lanthanu m strontium aluminate (LaSrAlO4)
- (La,Sr)(Al,Ta)O3
- Neodymium gallate (NdGaO3)
- Terbium gallium garnet (TGG)
- Gadolinium gallium garnet (GGG)
- Sodium chloride (NaCl)
- Potassium bromide (KBr)
- Potassium chloride (KCl)
-
Multifunctional single crystal substrate
-
Functional crystal
- Optical window
- Scintillation crystal
-
Laser crystal
- Rare earth doped lithium yttrium fluoride (RE:LiYF4)
- Rare earth doped lithium lutetium fluoride (RE:LiLuF4)
- Ytterbium doped yttrium aluminium garnet (Yb:YAG)
- Neodymium doped yttrium aluminium garnet (Nd:YAG)
- Erbium doped yttrium aluminium garnet (Er:YAG)
- Holmium doped yttrium aluminium garnet (Ho:YAG)
- Nd,Yb,Er,Tm,Ho,Cr,Lu Infrared laser crystal
- N* crystal
- Metal single crystal
- Material testing analysis
- Material processing
- Scientific research equipment
-
-
Epitaxial Wafer/Films
-
Inorganic epitaxial wafer/film
- Gallium Oxide epitaxial wafer (Ga2O3)
- ε - Gallium Oxide (Ga2O3)
- Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)
- Lithium niobate thin film epitaxial wafer
- Lithium tantalate thin film epitaxial wafer
- InGaAs epitaxial wafer
- Gallium Nitride(GaN) epitaxial wafer
- Epitaxial silicon wafer
- Yttrium Iron Garnet(YIG) epitaxial wafers
- Fullerenes&Fullerols
-
Inorganic epitaxial wafer/film
- Functional Glass
- Fine Ceramics
-
2-D material
- 2-D crystal
-
Layered transition metal compound
- Iron chloride (FeCl2)
- Niobium sulfide (NbS3)
- Gallium telluride iodide (GaTeI)
- Indium selenide (InSe)
- Copper indium phosphide sulfide (CuInP2S6)
- Tungsten sulfide selenide (WSSe)
- Iron germanium telluride (Fe3GeTe2)
- Nickel iodide (NiI2)
- Iron phosphorus sulfide (FePS3)
- Manganese phosphorus selenide (MnPSe3)
- Manganese phosphorus sulfide (MnPS3)
- Interface thermal conductive materials
-
Epitaxial Wafer/Films
-
-
High-purity element
- Non-metallic
-
Metal
- Scandium (Sc)
- Titanium (Ti)
- Indium (In)
- Gallium (Ga)
- Bismuth (Bi)
- Tin (Sn)
- Zinc (Zn)
- Cadmium (Cd)
- Antimony (Sb)
- Copper (Cu)
- Nickel (Ni)
- Molybdenum (Mo)
- Aluminium (Al)
- Rhenium (Re)
- Hafnium (Hf)
- Vanadium (V)
- Chromium (Cr)
- Iron (Fe)
- Cobalt (Co)
- Zirconium (Zr)
- Niobium (Nb)
- Tungsten (W)
- Germanium (Ge)
- Iron(Fe)
-
Compound raw materials
-
Oxide
- Tungsten Trioxide (WO3)
- Hafnium Dioxide (HfO2)
- Ytterbium Oxide (Yb2O3)
- Erbium Oxide (Er2O3)
- Lanthanu m Oxide (La2O3)
- Cerium Dioxide (CeO2)
- Tin Dioxide (SnO2)
- Niobium Oxide (Nb2O3)
- Zirconium Dioxide (ZrO2)
- Zinc Oxide (ZnO)
- Copper Oxide (CuO)
- Magnetite (Fe3O4)
- Titanium Dioxide (TiO2)
- Samarium (III) oxide (Sm2O3)
- Silicon Dioxide (SiO2)
- Aluminum Oxide (Al2O3)
- Gallium Oxide Ga2O3(Powder)
- Sulfide
- Fluoride
- Nitride
- Carbide
-
Halide
- Gallium Chloride (GaCl3)
- Indium Chloride (InCl3)
- Aluminum Chloride (AlCl3)
- Bismuth Chloride (BiCl3)
- Cadmium Chloride (CdCl2)
- Chromium Chloride (CrCl2)
- Chromium Chloride Hydrate (CrCl2(H2O)n)
- Copper Chloride (CuCl)
- Copper Chloride II (CuCl2)
- Cesium Chloride (CsCl)
- Europium Chloride (EuCl3)
- Europium Chloride Hydrate (EuCl3.xH2O)
- Magnesium Chloride (MgCl2)
- Sodium Chloride (NaCl)
- Nickel Chloride (NiCl2)
- Indium Chloride (InCl3)
- Indium Nitrate Hydrate (In(NO3).xH2O)
- Rubidium Chloride (RbCl3)
- Antimony Chloride (SbCl3)
- Samarium Chloride (SmCl3)
- Samarium Chloride Hydrate (SmCl3.xH2O)
- Scandium Chloride (ScCl3)
- Tellurium Chloride (TeCl3)
- Tantalum Chloride (TaCl5)
- Tungsten Chloride (WCl6)
- Aluminum Bromide (AlBr3)
- Barium Bromide (BaBr2)
- Cobalt Bromide (CoBr2)
- Cadmium Bromide (CdBr2)
- Gallium Bromide (GaBr3)
- Gallium Bromide Hydrate (GaBr3.xH2O)
- Nickel Bromide (NiBr2)
- Potassium Bromide (KBr)
- Lead Bromide (PbBr2)
- Zirconium Bromide (ZrBr2)
- Bismuth Bromide (BiBr4)
- Bismuth Iodide (BiI3)
- Calcium Iodide (CaI2)
- Gadolinium Iodide (GdI2)
- Cobalt Iodide (CoI2)
- Cesium Iodide (CsI)
- Europium Iodide (EuI2)
- Lithium Iodide (LiI)
- Lithium Iodide Hydrate (LiI.xH2O)
- Gallium Iodide (GaI3)
- Gadolinium Iodide (GdI3)
- Indium Iodide (InI3)
- Potassium Iodide (KI)
- Lanthanu m Iodide (LaI3)
- Lutetium Iodide (LuI3)
- Magnesium Iodide (MgI2)
- Sodium Iodide (NaI)
-
Oxide
-
High-purity element
-
-
Sputtering Target
-
Metal target material
- Gold (Au(T))
- Silver (Ag(T))
- Platinum (Pt(T))
- Palladium (Pd(T))
- Ruthenium (Ru(T))
- Iridium (Ir(T))
- Aluminium (Al(T))
- Copper (Cu(T))
- Titanium (Ti(T))
- Nickel (Ni(T))
- Chromium (Cr(T))
- Cobalt (Co(T))
- Iron (Fe(T))
- Manganese (Mn(T))
- Zinc (Zn(T))
- Vanadium (V(T))
- Tungsten (W(T))
- Hafnium (Hf(T))
- Niobium (Nb(T))
- Molybdenum (Mo(T))
- Lanthanu m (La (T))
- Cerium (Ce (T))
- Praseodymium (Pr (T))
- Neodymium (Nd (T))
- Samarium (Sm (T))
- Europium (Eu (T))
- Gadolinium (Gd (T))
- Terbium (Tb (T))
- Dysprosium (Dy (T))
- Holmium (Ho (T))
- Erbium (Er (T))
- Thulium (Tm (T))
- Ytterbium (Yb (T))
- Lutetium (Lu (T))
- Alloy target material
- Semiconductor target material
-
Oxide target material
- Aluminum Oxide (Al2O3(T))
- Silicon Dioxide (SiO2(T))
- Titanium Dioxide (TiO2(T))
- Chromium Oxide (Cr2O3(T))
- Nickel Oxide (NiO(T))
- Copper Oxide (CuO(T))
- Zinc Oxide (ZnO(T))
- Zirconium Oxide (ZrO2(T))
- Indium Tin Oxide (ITO(T))
- Indium Zinc Oxide (IZO(T))
- Aluminum Doped Zinc Oxide (AZO(T))
- Cerium Oxide (CeO2(T))
- Tungsten Trioxide (WO3(T))
- Hafnium Oxide (HfO2(T))
- Indium Gallium Zinc Oxide (IGZO(T))
- Nitride target material
- Sulfide target material
-
Antimony tellurium selenium boron target material
- Magnesium Boride (MgB2(T))
- Lanthanu m Hexaboride (LaB6(T))
- Titanium Diboride (TiB2(T))
- Zinc Selenide (ZnSe(T))
- Zinc Antimonide (Zn4Sb3(T))
- Cadmium Selenide (CdSe(T))
- Indium Telluride (In2Te3(T))
- Tin Selenide (SnSe(T))
- Germanium Antimonide (GeSb(T))
- Antimony Selenide (Sb2Se3(T))
- Antimony Telluride (Sb2Te3(T))
- Bismuth Telluride (Bi2Te3(T))
-
Metal target material
-
Sputtering Target
-
- Services
- Media
- Partner
- Contact Us
- About
硅 Si



硅是周期表第14组的元素,原子序数为14,是一种四价元素。硅单晶的结构为面心立方晶体结构,在这种晶体中,每个硅原子与四个相邻的硅原子共享电子,形成稳定的四面体结构。这种结构使硅具有良好的热稳定性和化学稳定性。
硅单晶是半导体工业的核心材料,其性能为灰黑色,具有金属光泽,熔点高(1410°C)、硬度高、脆性。广泛应用于电子、光电子、微电子等领域,特别是太阳能电池、电子元器件制造等方向。
硅单晶的性能优势包括半导体性质、高热导率、高介电常数和良好的机械性能。硅的电导率在导体和绝缘体之间,可以通过掺杂改变其导电性,因此被广泛应用于半导体行业。硅具有较高的热导率,这在电子器件中很重要,因为它有助于降低器件工作时的温度。硅的介电常数较高,使得它在微电子器件中有更多的应用。硅单晶具有优良的机械性能,使其在制备微电机等微系统中有很好的应用。
由于其优良的光学性能和机械性能,硅单晶在光电子器件、生物传感器和微电机等微纳系统领域也有广泛应用。
随着科技的进步和微电子技术的发展,对硅单晶的需求会进一步增加。随着人们对环保和可持续发展的重视,硅单晶在太阳能电池等新能源领域的应用也将得到更多的推动。另外,由于硅单晶在光电子器件、生物传感器和微电机等微纳系统领域的优良性能,预计这些领域的应用也会有所增加。
二面体科技提供多种规格订制的高质量Si晶体材料
Applications
• 电子元件制造
• 光学电子设备
• 微电子技术
• 太阳能电池
Features
• 高纯度
• 优良的半导体特性
• 完整的晶体结构
• 稳定的物化性质
-
主要性能参数
晶体结构
面心立方
熔点(℃)
1420
密度
2.4(g/cm3)
掺杂物质
不掺杂
掺B
掺P
类 型
I
P
N
电 阻 率
Ø 1000Ωcm
10-3~40Ωcm
10-3~40Ωcm
E P D
≤100∕cm2
≤100∕cm2
≤100∕cm2
氧含量(∕cm3)
≤1~1.8×1018
≤1~1.8×1018
≤1~1.8×1018
碳含量(∕cm3)
≤5×1016
≤5×1016
≤5×1016
尺寸
10×3m、10×5m、10×10mm、15×15mm,
Dia50.8mm,Dia76.2mm,Dia100mm
可按照客户需求,定制特殊方向和尺寸的基片
厚度
0.5mm、1.0mm
尺寸公差
<±0.1mm
厚度公差
<±0.015mm特殊要求可达到<±0.005mm)
抛光
单面或双面
晶面定向精度
±0.5°
边缘定向精度
2°(特殊要求可达到1°以内)
取向
<100>、<110>、<111>等
包装
100级洁净袋,1000级超净室