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Lithium aluminate (LiAlO2)

LiAlO2 (lithium aluminate) crystal is the most important substrate of High-temperature superconductivity thin films. It is well matched with High-temperature superconductivity materials such as YBaCuO, and has the characteristics of low dielectric constant and low microwave loss. LiAlO2 is a potential III-V nitride thin film substrate due to its good lattice mismatch with GaN, chemical stability at high temperatures, and more cost-effective than ZnO. LiAlO2 crystals can replace ZnO and sapphire as optical substrates. Lithium aluminate (LiAlO2) single crystal has a low lattice mismatch with GaN crystal, making it an excellent substrate for GaN thin films.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality LiAlO2 crystal,targets,materials.

Applications

LiAlO2 (lithium aluminate) crystal is the most important substrate for high-temperature superconducting thin films.
It can be used as a substrate for III-V nitride films.
LiAlO2 crystals can replace ZnO and sapphire as optical substrates.

Features

Lithium aluminate is well matched with High-temperature superconductivity materials such as YBaCuO, and has the characteristics of low dielectric constant and low microwave loss.
The chemical stability and cost-effectiveness at high temperatures are superior to zinc oxide.
Lithium aluminate (LiAlO2) single crystal has a low lattice mismatch with GaN crystal, making it an excellent substrate for GaN thin films.

  • Crystal Structure

    Tetragonal

    Lattice Constant

    a=5.17 A    c=6.26 A

    Melting Point

    1900℃

    Density

    2.62（g/cm3）

    Mohs Hardness

    7.5（mohs）

    Mismatch Rate with GaN<001>

    1.4%

    Dimension

     

    10x3mm，10x5mm，10x10mm，15x15mm，20x15mm，20x20mm


    Ф15,Ф20，Ф1″，Ф2″,Ф2.6″

    Thickness

    0.5mm，1.0mm

    Polishing

    One side or two sides

    Orientation

    ＜100＞  ＜001>

    Crystal Plane Orientation Accuracy

    ±0.5°

    Edge Orientation Accuracy

    2°（Special requirements can reach within 1°）

    Bevel Wafer

    According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.

    Surface Roughness

    Ra≤5Å（5×5µm）

    Package

    Class 100 clean bag, Class 1000 super clean room



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